By Ricardo Reis, Jochen A. G. Jess
Design of method on a Chip is the 1st of 2 volumes addressing the layout demanding situations linked to new generations of the semiconductor expertise. a few of the chapters are the compilations of tutorials awarded at workshops in Brazil within the fresh years through well-liked authors from around the globe. specifically the 1st publication bargains with elements and circuits. gadget versions need to fulfill the stipulations to be computationally cost-efficient as well as be actual and to scale over a number of generations of expertise. furthermore the ebook addresses problems with the parasitic habit of deep sub-micron elements, equivalent to parameter adaptations and sub-threshold results. moreover quite a few authors care for goods like combined sign parts and thoughts. We finish up with an exposition of the know-how difficulties to be solved if our group desires to continue the velocity of the "International expertise Roadmap for Semiconductors" (ITRS).
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Extra resources for Design of System on a Chip: Devices & Components
11. REFERENCES de Graaff, H. C. and Kloosterman, W. J. (1985) New formulation of the current and charge relations in bipolar transistors for modeling for CACD purposes. IEEE Trans. ED, 32, 2415-9. Getreu, I. E. (1976) Modeling the Bipolar Transistor. Tektronix, Beaverton. Gummel, H. , and Poon, H. C. (1970) An integral charge control model of bipolar transistors. Bell Syst. Tech. , 49, 827-52. , and Alberigi Quaranta, A. (1977) A review of some charge transport properties of silicon. , 20, 77-89.
3. A MOS Transistor Model for MixedAnalog-Digital Circuit Design 57 possible, while high weak inversion slope as well as high threshold voltage are required to achieve low leakage currents. 9V for future technologies, therefore reducing the available range of strong inversion operation. In any case, technology trends make operation in weak and moderate inversion become more and more important, and MOST models must give a precise description of these regions of operation. The present modeling approach based on transconductance to current ratio is suitable to address this situation.
1995) VBIC95 bipolar transistor model and associated parameter extraction. HP EESof IC-CAP User’s Meeting. Schaefer, B. and Dunn, M. (1996) Pulsed measurements and modeling for electro-thermal effect. Proc. IEEE BCTM, 110-7. Stubing, H. -M. (1987) A compact physical large-signal model for highspeed bipolar transistors at high current densities-Part I: one-dimensional model. IEEE Trans. ED, 34, 1741-51. Turgeon, L. J. and Mathews, J. R. (1980) A bipolar transistor model of quasisaturation for use in computer-aided design (CAD).